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The IWATSU SS-660P series high-frequency Rogowski current probe can directly measure the switching parameters of TO247-4 devices.

Published: 2022-09-29 Views: 次

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4-pin package models deliver higher efficiency and lower switching losses

A special feature of the TO-247PLUS 4-pin package is its 4-pin connection to the driver IC. The fourth pin eliminates the influence of the emitter pin inductance in the gate control loop, enabling the IGBT to respond faster to driver IC signals. The IGBT's faster response reduces switching energy losses and allows faster turn-on/turn-off switching. Using a 4-pin package instead of a 3-pin package reduces total switching losses by more than 20%.

TO-247 4pin package with Kelvin emitter graphic


Higher efficiency increases power density. Lower cost.

Higher efficiency and lower cost are common key requirements for next-generation designs. But can higher system performance be achieved at lower cost?

Due to the significant power losses of power devices in inverter circuits, the low loss or high efficiency of power switches directly affects the system's power output. The less energy lost in the system, the more energy is transferred to the output power, and the system power density increases accordingly. The less energy lost, the more energy is transferred to the output power, and the lower the output power cost in kW/€.

FeaturesBenefits
  • 20% lower total switching losses compared with TO-247 packages using the same technology

  • Extremely low control inductance loop

  • Emitter pin for driver feedback

  • Improved system efficiency compared with standard TO-247

  • Increased benefits under high-current conditions

  • IGBT operates at lower junction temperature

  • Lower power dissipation under overcurrent conditions

The IWATSU SS-620 and SS-620P series are the world's only high-frequency Rogowski current probes capable of directly testing TO247-4 devices.

SS660_targat.jpgMade-to-order product

SS-660 Series (common specifications at the bottom)


SS-660 Series appearance
Applicable devicesTO247-4 and GaN SMD devices
Sensor section wire diameter1 mm (max.)
Sensor section coil length84±4mm
Sensor section operating temperature range-40℃~ 125℃
Absolute maximum di/dtPeak[kA/μs]80
RMS[kA/μs]3.0

ModelFrequency band
[-3dB]

Sensitivity
[mV/A]

Coil wire diameterMaximum peak voltagePeak current

Peak di/dt
[kA/μs]

Noise
[mV rms]
SS-66365Hz~30MHz501mm600V120A83.5
SS-66432Hz~30MHz201mm600V300A202.5
SS-66517Hz~30MHz101mm600V600A402.0

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*For more detailed information, please contact us.