Measurement methods for current collapse effects in gallium nitride (GaN) devices (AlGaN/GaN HEMTs)
2026-01-14
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Current collapse is a degradation phenomenon unique to gallium nitride (GaN) devices—particularly AlGaN/GaN HEMTs—under high-voltage stress. It manifests as a drop in output current and an increase in on-resistance, severely compromising power output and reliability.
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