China's National Third-Generation Semiconductor Industry Technology Innovation Strategic Direction

Published: 2021-05-29 Views: 次

Wu Ling, Chairman of the Third-Generation Semiconductor Industry Technology Innovation Strategic Alliance and Vice Chairman of the Shenzhen Institute of Third-Generation Semiconductors, stated at the conference that third-generation semiconductors meet major national strategic needs such as national defense and security, intelligent manufacturing, industrial upgrading, and energy conservation and emission reduction.

In her view, third-generation semiconductors support the independent and controllable development of core devices for China's high-frequency, high-speed, and broadband communication systems, support the national energy strategy, and support the development of core power systems for high-speed trains and new energy vehicles, as well as the independent development of energy-saving and environmental protection technologies and national defense and security military equipment.

Wu Ling stated that third-generation semiconductors have now entered a period of explosive growth, with countries around the world racing to seize strategic high ground. In China, third-generation semiconductors have long received high attention at the government level.

Since 2004, the Chinese government has made corresponding arrangements for the research and development of third-generation semiconductor materials and launched a series of major research projects. 

In 2016, China launched the "Strategic Advanced Electronic Materials" key special project under the "13th Five-Year Plan" National Key R&D Program, in which third-generation semiconductor materials are an important research area.

Subsequently, among the 6 major science and technology projects and 9 major engineering projects oriented toward 2030 released by the State Council in 2016, third-generation semiconductors are an important part of the "Key New Materials R&D and Application" major project.

In December 2016, the State Council established the National New Materials Industry Development Leading Group to implement the strategy of building a manufacturing powerhouse and accelerate the development of the new materials industry; in February 2017, the National New Materials Industry Development Expert Advisory Committee was established.

In June 2017, the Third-Generation Semiconductor Industry Technology Innovation Strategic Alliance organized the compilation of the implementation plan for the third-generation semiconductor section of the 2030 National Key New Materials R&D and Application program.

Driven by national policies, Jiangsu, Zhejiang, Xiamen, Jiangxi, and other regions have gradually developed into distinctive third-generation semiconductor industry clusters. So what are the results so far? According to Wu Ling, domestic medium- and low-voltage power electronic materials and devices have initially achieved mass production, with applications rapidly penetrating the market.

In terms of SiC, TankeBlue, Shandong Tianyue, and the 2nd Institute of CETC have initially achieved mass production of 4-inch SiC single-crystal substrate materials and developed 6-inch samples; Tektronix Tianrun, Century Jinguang, the 55th and 13th Institutes of CETC, and several other enterprises and institutions have achieved mass production of 600-3300V SiC Schottky diodes and are in the user verification stage; CRRC Zhuzhou Times Electric, the State Grid Joint Research Institute, Xiamen Sanan, and other enterprises have built 6-inch SiC power electronic device process lines.

In terms of GaN, the 13th Institute of CETC has developed a series of GaN microwave power devices and MMIC products, which have been used by Huawei and ZTE for base station R&D; Suzhou Nanowin and Dongguan Zhongjia have the supply capacity for 2-4 inch GaN single-crystal substrate materials; Suzhou InnoScience, Suzhou Jingzhan, Jiangsu Nenghua, Hangzhou Silan Microelectronics, and Jiangsu Huagong Semiconductor have all entered the layout of GaN power electronic materials and devices; the Sanan Group has also built a GaN RF device process line.

According to development goals, between 2018 and 2020, China will complete the industrial infrastructure construction for third-generation semiconductors, including improving the industrial chain, developing core equipment, developing core processes, developing basic devices, and beginning demonstration applications.

Compiled by: Wide Bandgap Device Project Team, Changsha Ligao Jiechuang Instrument Co., Ltd.