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Dynamic On-Resistance Rds(on)dynamic

Rds(on)dynamic

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Dynamic On-Resistance Rds(on)dynamic

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Bandwidth： All DC <100Mhz >1GHZ

Channel： All Single Channel Dual Channel Multi-channel

Accuracy: All ppm-level Class 0.1 Class 0.2 Class 0.5

Attribute: All Current Voltage Spectrum Phase Impedance Temperature Magnetism Acoustics Optics

GaN HEMT Rds(on)dynamic measure GaN Dynamic On-Resistance Measurement Probe SS-350

Model：iwatsu ss-350 Country of Origin：Japan Category：Dynamic On-Resistance Rds(on)dynamic

Overview：High-precision measurement of the on-voltage at the start of GaN device switching, particularly suitable for evaluating low on-resistance GaN devices.With high stability, multiple ranges and high-precision clamping capability, it can complete mohm-level dynamic device on-resistance measurement under extremely high withstand voltage conditions. For GaN current collapse research, SS-350 is one of the best measurement solutions of its kind worldwide.

IWATSU (Japan) - PMK, Germany - N4LN4L- USA T&M - Japan APOLLOWAVE - Germany DR HUBERT China General Agent

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